dpg 10 i 200 pa ns hiperfred2 symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 140 i a v f 1.27 r 2.30 k/w v r = 1 3 min. 10 t = 10 ms applications: v rrm v 200 1 t vj vc = t vj c =ma 0.06 package: part number v r = t vj =c i f =a v t c = 145c d = p tot 65 w t c c = t vj 175 c -55 v i rrm = = 200 10 10 t vj = 45c dpg 10 i 200 pa v a 200 v 200 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 1.45 t vj c =25 c j j unction capacitance v = v; t 150 v f0 v 0.74 t vj = 175c r f 17.7 f = 1 mhz = c 25 m v 0.98 t vj =c i f =a v 10 1.17 i f =a 20 i f =a 20 threshold voltage slope resistance for power loss calculation only backside: cathode 3a t vj =c reverse recovery time a 5.5 35 45 ns (50 hz), sine t rr = 35 ns housing: high performance fast recovery diode low loss and soft recovery single diode to-220 r industry standard outline r epoxy meets ul 94v-0 r rohs compliant r vj i rm max. reverse recovery current i f =a; 10 25 t= 125c vj -di f =a/s 200 /dt t rr v r =v 130 t vj =c 25 t= 125c vj a 15 150 pf thermal resistance junction to case thjc rectangular 0.5 planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) fav average forward current fav 150 ixys reserves the right to change limits, conditions and dimensions. ? 20090323a data according to iec 60747and per diode unless otherwise specified 2009 ixys all rights reserved
dpg 10 i 200 pa i rms a per pin 35 r thch k/w 0.50 m d nm 0.6 mounting torque 0.4 t stg c 150 storage temperature -55 weight g 2 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit i is typically limited by: 1. pin-to-chip re sistance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a non-isol ated backside, the whole current capability can be used by con necting the backside. f c n 60 mounting force with clip 20 ordering delivering mode base qty code key standard part name dpg 10 i 200 pa 506301 tube 50 xxxxxx yyww logo marking on product datecode assembly code abcdef product marking d p g 10 i 200 pa part number diode hiperfred extreme fast single diode to-220ac (2) = = = dpg10i200pm to-220acfp (2) similar part package 1) 1 ) marking on product DPG10I200PA 200 voltage class current rating [a] reverse voltage [v] = = = = rms ixys reserves the right to change limits, conditions and dimensions. ? 20090323a data according to iec 60747and per diode unless otherwise specified 2009 ixys all rights reserved
dpg 10 i 200 pa outlines to-220 ixys reserves the right to change limits, conditions and dimensions. ? 20090323a data according to iec 60747and per diode unless otherwise specified 2009 ixys all rights reserved
dpg 10 i 200 pa 0 100 200 300 400 500 0 20 40 60 80 0 40 80 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj [c] 0 100 200 300 400 500 0 2 4 6 8 10 12 0 100 200 300 400 500 600 v fr [v] 0 100 200 300 400 500 0 2 4 6 8 10 12 0 100 200 300 400 500 0.0 0.1 0.2 0.3 0.4 0.0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 20 25 30 i rr [a] q rr [c] i f [a] v f [v] -di f /dt [a/s] t rr [ns] v fr t fr i rr q rr -di f /dt [a/s] -di f /dt [a/s] 5 a 10 a -di f /dt [a/s] t fr [ns] 0.001 0.01 0.1 1 10 0 1 2 3 t [s] z thjh [k/w] 0 100 200 300 400 500 0 2 4 6 8 10 e rec [j] -di f /dt [a/s] t vj = 25c 125c 150c fig. 1 forward current i f versus forward voltage drop v f fig. 2 typ. reverse recovery charge q rr versus -di f /dt fig. 3 typ. reverse recovery current i rr versus -di f /dt fig. 4 dynamic parameters q rr , i rr versus t vj fig. 5 typ. reverse recovery time t rr versus -di f /dt fig. 6 typ. forward recovery voltage v fr and t fr versus di f /dt fig. 7 typ. recovery energy e rec versus -di f /dt fig. 8 transient thermal resistance junction to case i f = 20 a 20 a 10 a 5 a r thi [k/w] 0.3866 0.7062 0.8127 0.3945 t i [s] 0.0004 0.0025 0.022 0.13 20 a 10 a 5 a t vj = 125c v r = 130 v t vj = 125c v r = 130 v t vj = 125c v r = 130 v t vj = 125c v r = 130 v t vj = 125c i f = 10 a v r = 130 v i f = 5 a 10 a 20 a ixys reserves the right to change limits, conditions and dimensions. ? 20090323a data according to iec 60747and per diode unless otherwise specified 2009 ixys all rights reserved
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